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tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 1 of 13 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? ka-band vsat ground terminal ? point-to-point radio qfn 3x3mm 12l product features functional block diagram ? frequency range: 28 ? 32 ghz ? power: 17 dbm psat, 16 dbm p1db ? gain: 14.5 db ? toi: 24dbm ? nf: 7.5 db ? bias: vd = 6 v, id = 80 ma, vg = -0.45 v typical ? package dimensions: 3.0 x 3.0 x 0.85 mm general description pin configuration the triquint tga4512-sm is a ka-band packaged driver amplifier. the tga4512-sm operates from 28- 32 ghz and is designed using triquint?s power phemt production process. the tga4512-sm typically provides 17 dbm of saturated output power with small signal gain of 14.5 db. the tga4512-sm is available in a low-cost, surface mount 12 lead 3x3 qfn package and is ideally suited for ka-band vsat ground terminal, and point-to-point radio. lead-free and rohs compliant evaluation boards are available upon request. pin # symbol 1, 3, 4, 5, 7, 9, 10, 12 n/c 2 rf in 6 vg 8 rf out 11 vd ordering information part no. eccn description tga4512-sm 3a001.b.2.d ka-band driver amplifier standard t/r size = 1000 pieces on a 7? reel. 1 2 3 9 8 7 45 6 12 11 10
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 2 of 13 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,vd +8 v gate voltage,vg -5 to 0 v drain current, id 100 ma gate current, ig -0.6 to 3.5 power dissipation, pdiss 0.65 w rf input power, cw, 50 ? ,t = 25oc 18 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 operation of this device outsi de the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 6 v id 80 ma id_drive (under rf drive) 100 ma vg -0.45 v electrical specifi cations are measured at sp ecified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vd = 6 v, id = 80 ma, vg = -0.45 v typical . parameter min typical max units operational frequency range 28 32 ghz gain 11 14.5 db input return loss -12 db output return loss -10 db output power @ saturation 14 17 dbm output power @ 1db gain compression 16 dbm output toi 24 dbm noise figure 7.5 db gain temperature coefficient -0.38 db/c power temperature coefficient -0.01 dbm/c
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 3 of 13 - disclaimer: sub j ect to chan g e without notice specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 85 c jc = 117.5 c/w channel temperature (tch), and median lifetime (tm) tbase = 85 c, vd = 6 v, id = 80 ma, pdiss = 0.48 w tch = 141 c tm = 2.2 e+6 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 85 c, vd = 6 v, id = 100 ma, pout = 16.9 dbm, pdiss = 0.55 w tch = 150 c tm = 1 e+6 hours 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 25 50 75 100 125 150 175 200 median lifetime, tm, (hours) channel temperature, tch, (c) median lifetime (tm) vs. channel temperature (tch) fet3 ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ?
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 4 of 13 - disclaimer: sub j ect to chan g e without notice typical performance ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? -30 -25 -20 -15 -10 -5 0 10 11 12 13 14 15 16 26 27 28 29 30 31 32 33 34 35 36 return loss (db) gain (db) frequency (ghz) gain, return loss vs. frequency vd = 6 v, id = 80 ma, vg = -0.45 v typical, +25 0 c gain irl orl 0 1 2 3 4 5 6 7 8 9 10 11 12 26 27 28 29 30 31 32 33 34 noise figure (db) frequency (ghz) noise figure vs. frequency vd = 6 v, id = 80 ma, vg = -0.45 v typical, +25 0 c 10 11 12 13 14 15 16 17 18 19 26 27 28 29 30 31 32 33 34 35 36 output power (dbm) frequency (ghz) power vs. frequency vd = 6 v, id = 80 ma, vg = -0.45 v typical, +25 0 c psat p1db 70 75 80 85 90 95 100 105 110 115 120 125 130 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 id (ma) power (dbm), gain (db) input power (dbm) power, gain, id vs. input power @ 30 ghz vd = 6 v, id = 80 ma, vg = -0.45 v typical, +25 0 c <-- power <-- gain --> id 15 16 17 18 19 20 21 22 23 24 25 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 output toi (dbm) frequency (ghz) toi vs. frequency vs. pout/tone vd = 6 v, id = 80 ma, vg = -0.45 v typical, +25 0 c -40 -35 -30 -25 -20 -15 -10 -5 0 0123456789101112131415 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 6 v, id = 80 ma, vg = -0.45 v typical, +25 0 c 28ghz 29ghz pout/tone = 8dbm 30ghz pout/tone = 6dbm 31ghz
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 5 of 13 - disclaimer: sub j ect to chan g e without notice typical performance (cont.) ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? 10 11 12 13 14 15 16 26 27 28 29 30 31 32 33 34 35 36 gain (db) frequency (ghz) gain vs. frequency vs. vd vd = 4 - 7 v, id = 60 ma, +25 0 c 7v, 60ma 6v, 60ma 5v, 60ma 4v, 60ma 10 11 12 13 14 15 16 26 27 28 29 30 31 32 33 34 35 36 gain (db) frequency (ghz) gain vs. frequency vs. id vd = 4 - 7 v, id = 60 ma, +25 0 c 6v, 80ma 6v, 60ma 6v, 45ma 10 11 12 13 14 15 16 17 18 19 26 27 28 29 30 31 32 33 34 35 36 psat (dbm) frequency (ghz) saturated power vs. frequency vs. vd vd = 4 - 7 v, id = 60 ma, +25 0 c 7v, 60ma 6v, 60ma 5v, 60ma 4v, 60ma 10 11 12 13 14 15 16 17 18 19 26 27 28 29 30 31 32 33 34 35 36 psat (dbm) frequency (ghz) saturated power vs. frequency vs. id vd = 6 v, id = 45 - 80 ma, +25 0 c 6v, 80ma 6v, 60ma 6v, 45ma 0 2 4 6 8 10 12 14 16 18 20 26 27 28 29 30 31 32 33 34 35 36 gain (db) frequency (ghz) gain vs. frequency vs. temperature vd = 6 v, id = 80 ma, vg = -0.45 v typical 11 12 13 14 15 16 17 18 19 20 26 27 28 29 30 31 32 33 34 psat (dbm) frequency (ghz) psat vs. frequency vs. temperature vd = 6 v, id = 80 ma, vg = -0.45 v typical -40c -40 c +25c +25 c +85c +85 c
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 6 of 13 - disclaimer: sub j ect to chan g e without notice application circuit ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? bias-up procedure bias-down procedure vg set to -1.5 v turn off rf supply vd set to +6 v reduce vg to -1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 80 ma. this will be ~ vg = -0.45 v turn vd to 0 v apply rf signal to rf input turn vg to 0 v rf in vd = 6 v vg = -0.45 v typical c2 10 ohms c1 1 uf 1 uf 1 2 3 45 6 9 8 7 12 11 10 j1 rf out j2 100 pf c3 100 pf c4 r1
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 7 of 13 - disclaimer: sub j ect to chan g e without notice pin description ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? 1 2 3 9 8 7 45 6 12 11 10 13 pin symbol description 1, 3, 7, 9 n/c no internal connection; must be grounded on pcb 2 rf in input, matched to 50 ohms 4, 5, 10, 12 n/c no internal connection. can be grounded or left open 6 vg gate voltage. bias network is required; see application circuit on page 11 as an example. 8 rf out output, matched to 50 ohms 11 vd drain voltage. bias network is required; see application circuit on page 11 as an example. 13 gnd backside paddle. multiple vias should be employed to minimize inductance and thermal resistance; see mounting conf iguration on page 15 for suggested footprint.
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 8 of 13 - disclaimer: sub j ect to chan g e without notice applications information pc board layout top rf layer is 0.008? thick rogers ro4003, ? r = 3.38. metal layers are 1-oz copper. microstrip 50 ? line detail: width = 0.0175?. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount proce sses vary from company to company, careful process development is recommended. for further technical information, refer to the tga4512-sm product information page. bill of material ref des value description manufacturer part number c1, c2 100 pf cap, 0402, 50v, 5%, npo various c3, c4 1 uf cap, 0603, 50v, 5%, npo various r1 10 ohms res, 0402, 1/16w, 5%, npo various ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ?
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 9 of 13 - disclaimer: sub j ect to chan g e without notice mechanical information package information and dimensions all dimensions are in millimeters . ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ?
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 10 of 13 - disclaimer: sub j ect to chan g e without notice this package is lead-free/rohs-com pliant. the package base is copper alloy and the plating material on the leads is matte tin. it is compatible with both lead-free (maximum 260 c reflow temperature) and tin-lead (maximum 245 c reflow temperature) soldering processes. the tga4512-sm will be marked with the ?4512? designator and a lot code marked below the part designator . the ?yy? represents the last two digits of the year the part was manuf actured, the ?ww? is the work week, and the ?xxxx? is an auto-generated number. 19.0 ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? 21.5 mechanical information (cont.) mounting configuration all dimensions are in millimeters (inches). notes: 1. a heatsink underneath the area of the pcb for the mounted device is recommended for proper thermal operation. 2. ground / thermal vias are crit ical for the proper performance of this device. vias have a fina l plated thru diameter of .25 mm (.010?). tape and reel information tape and reel specifications for this part are also available on the triquint website in the ?application notes? section. standard t/r size = 1000 pieces on a 7 x 0.5? reel.
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 11 of 13 - disclaimer: sub j ect to chan g e without notice carrier and cover tape dimensions part feature symbol size (in) size (mm) cavity length a0 0.130 3.3 width b0 0.130 3.3 depth k0 0.043 1.1 pitch p1 0.315 8.0 distance between centerline cavity to perforation length direction p2 0.079 2.0 cavity to perforation width direction f 0.217 5.5 cover tape width c 0.362 9.2 carrier tape width w 0.472 12.0 product compliance information esd information esd rating: tbd value: passes tbd min. test: human body model (hbm) standard: jedec standard jesd22-a114 solderability compatible with the latest version of j-std-020, lead free solder, 260 this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level tbd at +260 c convection reflow the part is rated moisture se nsitivity level tbd at 260c per jedec standard ipc/jedec j-std-020. eccn us department of commerce 3a001.b.2.d ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ?
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 12 of 13 - disclaimer: sub j ect to chan g e without notice recommended soldering temperature profile contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information: email: info-networks@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ?
tga4512-sm ka-band driver amplifier preliminary data sheet: rev a 04/26/12 - 13 of 13 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reason ably be expected to cause severe personal injury or death. copyright ? 2012 triquint semiconductor, inc. all rights reserved.

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